9icnet provides you with EMX-7T12SP designed and produced by East Electronics, which is sold in 9icnet on the spot, and can be purchased through channels such as the original factory and agents. EMX-7T12SP price reference $2.24000. East Electronics EMX-7T12SP Package/Specification: BUZZER 12V 12MM TH. You can download EMX-7T12SP english data, pin diagram, Datasheet data sheet function manual, the data contains detailed pin diagrams of diode rectifiers, application circuit diagrams of functions, voltages, usage methods and tutorials.
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The EMX3T2R is TRANS 2NPN 50V 0.15A 6EMT, that includes EMX3 Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as SOT-563, SOT-666, Mounting Type is designed to work in Surface Mount, as well as the EMT6 Supplier Device Package, the device can also be used as Dual Configuration. In addition, the Power Max is 150mW, the device is offered in 2 NPN (Dual) Transistor Type, the device has a 150mA of Current Collector Ic Max, and Voltage Collector Emitter Breakdown Max is 50V, and the DC Current Gain hFE Min Ic Vce is 120 @ 1mA, 6V, and Vce Saturation Max Ib Ic is 400mV @ 5mA, 50mA, and the Current Collector Cutoff Max is 100nA (ICBO), and Frequency Transition is 180MHz, and the Pd Power Dissipation is 150 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Collector Emitter Voltage VCEO Max is 50 V, and the Transistor Polarity is NPN, and Collector Emitter Saturation Voltage is 0.4 V, and the Collector Base Voltage VCBO is 60 V, and Emitter Base Voltage VEBO is 7 V, and the Maximum DC Collector Current is 0.15 A, and Gain Bandwidth Product fT is 180 MHz, and the Continuous Collector Current is 150 mA, and DC Collector Base Gain hfe Min is 120, and the DC Current Gain hFE Max is 560.
The EMX4T2R is TRANS 2NPN 20V 0.05A 6EMT, that includes 20V Voltage Collector Emitter Breakdown Max, they are designed to operate with a 500mV @ 4mA, 20mA Vce Saturation Max Ib Ic, Transistor Type is shown on datasheet note for use in a 2 NPN (Dual), that offers Transistor Polarity features such as NPN, Supplier Device Package is designed to work in EMT6, as well as the EMX4 Series, the device can also be used as 150mW Power Max. In addition, the Pd Power Dissipation is 150 mW, the device is offered in Digi-ReelR Alternate Packaging Packaging, the device has a SOT-563, SOT-666 of Package Case, and Mounting Style is SMD/SMT, and the Mounting Type is Surface Mount, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and Maximum DC Collector Current is 0.05 A, and the Gain Bandwidth Product fT is 1.5 GHz, and Frequency Transition is 1.5GHz, and the Emitter Base Voltage VEBO is 3 V, and DC Current Gain hFE Min Ic Vce is 56 @ 10mA, 10V, and the DC Current Gain hFE Max is 27 at 10 mA at 10 V, and DC Collector Base Gain hfe Min is 27, and the Current Collector Ic Max is 50mA, and Current Collector Cutoff Max is 500nA (ICBO), and the Configuration is Dual, and Collector Emitter Voltage VCEO Max is 20 V, and the Collector Base Voltage VCBO is 30 V.
The EMX5T2R is TRANS 2NPN 11V 0.05A 6EMT, that includes 20 V Collector Base Voltage VCBO, they are designed to operate with a 11 V Collector Emitter Voltage VCEO Max, Configuration is shown on datasheet note for use in a Dual, that offers Current Collector Cutoff Max features such as 500nA (ICBO), Current Collector Ic Max is designed to work in 50mA, as well as the 56 DC Collector Base Gain hfe Min, the device can also be used as 56 at 5 mA at 10 V DC Current Gain hFE Max. In addition, the DC Current Gain hFE Min Ic Vce is 56 @ 5mA, 10V, the device is offered in 3 V Emitter Base Voltage VEBO, the device has a 3.2GHz of Frequency Transition, and Gain Bandwidth Product fT is 3.2 GHz, and the Maximum DC Collector Current is 0.05 A, it has an Maximum Operating Temperature range of + 150 C, and the Mounting Type is Surface Mount, and Mounting Style is SMD/SMT, and the Package Case is SOT-563, SOT-666, and Packaging is Digi-ReelR Alternate Packaging, and the Pd Power Dissipation is 150 mW, and Power Max is 150mW, and the Series is EMX5, and Supplier Device Package is EMT6, and the Transistor Polarity is NPN, and Transistor Type is 2 NPN (Dual), and the Vce Saturation Max Ib Ic is 500mV @ 5mA, 10mA, and Voltage Collector Emitter Breakdown Max is 11V.
EMX52T2R with EDA / CAD Models, that includes Surface Mount Mounting Type, they are designed to operate with a SOT-563, SOT-666 Package Case, Supplier Device Package is shown on datasheet note for use in a EMT6, that offers Packaging features such as Digi-ReelR Alternate Packaging, Voltage Collector Emitter Breakdown Max is designed to work in 50V, as well as the 350MHz Frequency Transition, the device can also be used as 300mV @ 5mA, 50mA Vce Saturation Max Ib Ic. In addition, the Transistor Type is 2 NPN (Dual), the device is offered in 150mW Power Max, the device has a 120 @ 1mA, 6V of DC Current Gain hFE Min Ic Vce, and Current Collector Cutoff Max is 100nA (ICBO), and the Current Collector Ic Max is 100mA.
