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TH58NVG2S3HTAI0 with pin details, that includes Tray Packaging, they are designed to operate with a SMD/SMT Mounting Style, Package Case is shown on datasheet note for use in a 48-TFSOP (0.724", 18.40mm Width), it has an Operating Temperature range of -40°C ~ 85°C (TA), Interface is designed to work in Parallel/Serial, as well as the 2.7 V ~ 3.6 V Voltage Supply, the device can also be used as 48-TSOP I Supplier Device Package. In addition, the Memory Size is 4G (512M x 8), the device is offered in EEPROM - NAND Memory Type, the device has a 25ns of Speed, and Access Time is 25 ns, and the Format Memory is EEPROM - Serial I/O Data Bus, it has an Maximum Operating Temperature range of + 85 C, it has an Minimum Operating Temperature range of - 40 C, and Operating Supply Voltage is 3.3 V, and the Interface Type is Parallel, and Organization is 512 M x 8, and the Supply Voltage Max is 3.6 V, and Supply Voltage Min is 2.7 V.
The TH58NVG2S3HTA00 is IC EEPROM 4GBIT 25NS 48TSOP, that includes 2.7 V ~ 3.6 V Voltage Supply, they are designed to operate with a 2.7 V Supply Voltage Min, Supply Voltage Max is shown on datasheet note for use in a 3.6 V, that offers Supplier Device Package features such as 48-TSOP I, Speed is designed to work in 25ns, as well as the Tray Packaging, the device can also be used as 48-TFSOP (0.724", 18.40mm Width) Package Case. In addition, the Organization is 512 M x 8, it has an Operating Temperature range of 0°C ~ 70°C (TA), the device has a 3.3 V of Operating Supply Voltage, and Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of 0 C, and Memory Type is EEPROM - NAND, and the Memory Size is 4G (512M x 8), it has an Maximum Operating Temperature range of + 70 C, and the Interface Type is Parallel, and Interface is Parallel/Serial, and the Format Memory is EEPROM - Serial I/O Data Bus, and Access Time is 25 ns.
The TH58NVG3S0HBAI4 is Flash Memory 3.3V 8Gbit NAND EEPROM manufactured by Toshiba. The TH58NVG3S0HBAI4 is available in FBGA-63 Package, is part of the Memory, , and with support for Flash Memory 3.3V 8Gbit NAND EEPROM, NAND Flash Parallel 3.3V 8G-bit 1G x 8.
