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NLSF3T126MNR2

  • 描述:逻辑类型: 缓冲区,非反相 电源电压: 2伏~5.5伏 每个元件的位数: one 供应商设备包装: 16-QFN(3x3) 工作温度: -40摄氏度~85摄氏度(TA) 安装类别: 表面安装
  • 品牌: 安盛美 (onsemi)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 902

  • 库存: 8570
  • 单价: ¥2.38026
  • 数量:
    - +
  • 总计: ¥2,146.99
在线询价

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规格参数

  • 制造厂商 安盛美 (onsemi)
  • 逻辑类型 缓冲区,非反相
  • 输入类别 -
  • 输出类别 三态
  • 输出高电流, 输出低电流 8毫安, 8毫安
  • 电源电压 2伏~5.5伏
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 部件状态 过时的
  • 元件数量 four
  • 每个元件的位数 one
  • 包装/外壳 16-VFQFN外露焊盘
  • 供应商设备包装 16-QFN(3x3)

NLSF3T126MNR2 产品详情

The NLSF3T126MNR2 is a high speed CMOS quad bus buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.The NLSF3T126MNR2 requires the 3-state control input (OE)to be set Low to place the output into the high impedance state.The T126 inputs are compatible with TTL levels. This device can be used as a level converter for interfacing 3.3 V to 5.0 V, because it has full 5.0 V CMOS level output swings. The NLSF3T126MNR2 input structures provide protection when voltages between 0 V and 5.5 V are applied, regardless of the supply voltage. The output structures also provide protection when VCC = 0 V. These input and output structures help prevent device destruction caused by supply voltage - input/output voltage mismatch, battery backup, hot insertion, etc. The internal circuit is composed of three stages, inculding a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V systems to 3.0 V systems.

Feature

  • High Speed: tpD = 3.8 ns (Typ) at VCC = 5.0 V
  • Low Power Dissipation: ICC = 4.0 µA (Max) at TA = 25°C
  • TTl-Compatible Inputs: VIL = 0.8 V; VIH = 2.0 V
  • Power Down Protection Provided on Inputs
  • Balanced Propagation Delays
  • Designed for 2.0 V to 5.5 V Operating Range
  • Low Noise: VOLP = 0.8 V (Max)
  • Pin and Function Compatible with Other Staqndard Logic Families
  • latch up Performance Exceeds 300 mA
  • ESD Performance: HBM > 2000 V; Machine Model > 200 V
  • Chip Complexity: 72 FETs or 18 Equivalent Gates
  • Pb-Free Package is Available


(Picture: Pinout)

NLSF3T126MNR2所属分类:逻辑接收/发送/驱动/缓冲器,NLSF3T126MNR2 由 安盛美 (onsemi) 设计生产,可通过久芯网进行购买。NLSF3T126MNR2价格参考¥2.380257,你可以下载 NLSF3T126MNR2中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询NLSF3T126MNR2规格参数、现货库存、封装信息等信息!

安盛美 (onsemi)

安盛美 (onsemi)

onsemi正在推动节能创新,使客户能够减少全球能源使用。该公司提供全面的节能电源和信号管理、逻辑、离散和定制解决方案组合,以帮助设计工程师解决其在汽车、通信、计算、消费、工业、LED照明、医疗、军事/...

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