9icnet provides you with BSP126,115 designed and produced by NXP USA Inc., which is sold in 9icnet on the spot, and can be purchased through channels such as the original factory and agents. BSP126,115 price reference $0.16000. NXP USA Inc. BSP126,115 Package/Specification: MOSFET N-CH 250V 375MA SOT223. You can download BSP126,115 english data, pin diagram, Datasheet data sheet function manual, the data contains detailed pin diagrams of diode rectifiers, application circuit diagrams of functions, voltages, usage methods and tutorials.
Prices and stocks marked on 9icnet are for reference only. If you don't find what you are looking for, you can contact us by email or online message, such as BSP126,115 price, stock quantity, data sheet and manufacturer. We look forward to your contact and provide you with quality service.
The BSP125H6327XTSA1 is MOSFET N-Ch 600V 120mA SOT-223-3, that includes BSP125 Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a BSP125 H6327 SP001058576, that offers Unit Weight features such as 0.008826 oz, Mounting Style is designed to work in SMD/SMT, as well as the SOT-223-4 Package Case, the device can also be used as Si Technology. In addition, the Number of Channels is 1 Channel, the device is offered in Single Configuration, the device has a 1 N-Channel of Transistor Type, and Pd Power Dissipation is 1.8 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 110 ns, and Rise Time is 14.4 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 120 mA, and the Vds Drain Source Breakdown Voltage is 600 V, and Vgs th Gate Source Threshold Voltage is 1.9 V, and the Rds On Drain Source Resistance is 25 Ohms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 20 ns, and Typical Turn On Delay Time is 7.7 ns, and the Qg Gate Charge is 4.4 nC, and Forward Transconductance Min is 0.06 S, and the Channel Mode is Enhancement.
The BSP125H6433XTMA1 is MOSFET N-Ch 600V 120mA SOT-223-3, that includes 1.3 V Vgs th Gate Source Threshold Voltage, they are designed to operate with a 20 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 600 V, that offers Unit Weight features such as 0.008826 oz, Typical Turn On Delay Time is designed to work in 7.7 ns, as well as the 20 ns Typical Turn Off Delay Time, the device can also be used as 1 N-Channel Transistor Type. In addition, the Transistor Polarity is N-Channel, the device is offered in Si Technology, the device has a BSP125 of Series, and Rise Time is 14.4 ns, and the Rds On Drain Source Resistance is 45 Ohms, and Qg Gate Charge is 4.4 nC, and the Pd Power Dissipation is 1.8 W, and Part Aliases is BSP125 H6433 SP001058578, and the Packaging is Reel, and Package Case is SOT-223-4, and the Number of Channels is 1 Channel, and Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and the Id Continuous Drain Current is 120 mA, and Forward Transconductance Min is 180 mS, and the Fall Time is 110 ns, and Configuration is Single, and the Channel Mode is Enhancement.
The BSP125L6327 is MOSFET N-CH 600V 120MA SOT-223 manufactured by INFINEON. The BSP125L6327 is available in TO-261-4, TO-261AA Package, is part of the FETs - Single, , and with support for MOSFET N-CH 600V 120MA SOT-223.
BSP126 with EDA / CAD Models manufactured by NXP. The BSP126 is available in SOT-223 Package, is part of the FETs - Single.
