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The NTE4151PT1G is MOSFET P-CH 20V 0.76A SC-89, that includes NTE4151P Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.001058 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in SC-89, SOT-490, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a SC-89-3 of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET P-Channel, Metal Oxide, and Power Max is 313mW, and the Transistor Type is 1 P-Channel, and Drain to Source Voltage Vdss is 20V, and the Input Capacitance Ciss Vds is 156pF @ 5V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 760mA (Tj), and Rds On Max Id Vgs is 360 mOhm @ 350mA, 4.5V, and the Vgs th Max Id is 450mV @ 250μA, and Gate Charge Qg Vgs is 2.1nC @ 4.5V, and the Pd Power Dissipation is 313 mW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 8.2 ns, and the Rise Time is 8.2 ns, and Vgs Gate Source Voltage is 6 V, and the Id Continuous Drain Current is - 760 mA, and Vds Drain Source Breakdown Voltage is - 20 V, and the Rds On Drain Source Resistance is 490 mOhms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 29 ns, and Typical Turn On Delay Time is 8 ns, and the Forward Transconductance Min is 0.4 S, and Channel Mode is Enhancement.
The NTE4153NT1G is MOSFET N-CH 20V 915MA SC-89, that includes 1.1V @ 250μA Vgs th Max Id, they are designed to operate with a 6 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 20 V, that offers Unit Weight features such as 0.001058 oz, Typical Turn On Delay Time is designed to work in 3.7 ns, as well as the 25 ns Typical Turn Off Delay Time, the device can also be used as 1 N-Channel Transistor Type. In addition, the Transistor Polarity is N-Channel, the device is offered in Si Technology, the device has a SC-89-3 of Supplier Device Package, and Series is NTE4153N, and the Rise Time is 4.4 ns, and Rds On Max Id Vgs is 230 mOhm @ 600mA, 4.5V, and the Rds On Drain Source Resistance is 500 mOhms, and Power Max is 300mW, and the Pd Power Dissipation is 300 mW, and Packaging is Digi-ReelR Alternate Packaging, and the Package Case is SC-89, SOT-490, it has an Operating Temperature range of -55°C ~ 150°C (TJ), and the Number of Channels is 1 Channel, and Mounting Style is SMD/SMT, and the Mounting Type is Surface Mount, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and Input Capacitance Ciss Vds is 110pF @ 16V, and the Id Continuous Drain Current is 915 mA, and Gate Charge Qg Vgs is 1.82nC @ 4.5V, and the Forward Transconductance Min is 1.4 S, and FET Type is MOSFET N-Channel, Metal Oxide, and the FET Feature is Standard, and Fall Time is 4.4 ns, and the Drain to Source Voltage Vdss is 20V, and Current Continuous Drain Id 25°C is 915mA (Ta), and the Configuration is Single, and Channel Mode is Enhancement.
The NTE359 is Trans RF BJT NPN 35V 3A 30000mW 4-Pin manufactured by NTE. The NTE359 is available in MODULE Package, is part of the Module, , and with support for Trans RF BJT NPN 35V 3A 30000mW 4-Pin.
The NTE4 is Power Transformers TRANSFRMER AUD INPUT 1:4 RATIO manufactured by Neutrik. is part of the Power Transformers, , and with support for Power Transformers TRANSFRMER AUD INPUT 1:4 RATIO.
