The NIS5112D1R2G is an integrated switch utilizing a high side N-channel FET driven by an internal charge pump.This switch features a MOSFET which allows for current sensing using inexpensive chip resistors intead of expensive, low impedance current shunts.It is designed to operate in 12 V systems and includes a robust thermal protection circuit. 
  
 
Feature
 
 
 
  - Integrated Power Device
 
  - Power Device Thermally Protected
 
  - No External Current Shunt Required
 
  - Enable/Timer Pin
 
  - Adjustable Slew Rate for Output Voltage
 
  - 9 V to 18 V Input Range
 
  - 30 mΩ Typical
 
  - Internal Charge Pump
 
 
 
  
  
 
Applications
 
 
 
 (Picture: Pinout)