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MT28GU01GAAA1EGC-0SIT

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 1Gb (64M x 16) 电源电压: 1.7伏~2伏 时钟频率: 133兆赫 供应商设备包装: 64-TBGA (10x8)
  • 品牌: 镁光 (Micron)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 0
  • 单价: ¥11.92181
  • 数量:
    - +
  • 总计: ¥11.92
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规格参数

  • 储存接口 并联
  • 时钟频率 133兆赫
  • 单字、单页写入耗时 -
  • 存储类型 Non-Volatile
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 存储格式 FLASH
  • 技术 FLASH-NOR
  • 制造厂商 镁光 (Micron)
  • 电源电压 1.7伏~2伏
  • 存储容量 1Gb (64M x 16)
  • 访达时期 96纳秒
  • 部件状态 过时的
  • 包装/外壳 64-TBGA
  • 供应商设备包装 64-TBGA (10x8)

MT28GU01GAAA1EGC-0SIT 产品详情

The PC28F00AG18FE is a parallel StrataFlash Embedded Memory provides high read and write performance at low voltage on a 16-bit data bus. The multi-partition architecture provides read-while-write and read-while-erase capability, with individually erasable memory blocks sized for optimum code and data storage. Upon initial power-up or return from reset, the device defaults to asynchronous read mode. Configuring the read configuration register enables synchronous burst mode reads. In synchronous burst mode, output data is synchronized with a user-supplied clock signal. In continuous-burst mode, a data read can traverse partition boundaries. A wait signal simplifies synchronizing the CPU to the memory. One-time programmable area enables unique identification that can be used to increase security. Additionally, the individual block lock feature provides zero-latency block locking and unlocking to protect against unwanted program or erase of the array.

Feature

  • Quality and reliability
  • 20µs Typical program/erase suspend
  • Multi-level cell technology
  • Symmetrically-blocked array architecture
  • Status register for partition/device status

Applications

Communications & Networking
MT28GU01GAAA1EGC-0SIT所属分类:存储器,MT28GU01GAAA1EGC-0SIT 由 镁光 (Micron) 设计生产,可通过久芯网进行购买。MT28GU01GAAA1EGC-0SIT价格参考¥11.921813,你可以下载 MT28GU01GAAA1EGC-0SIT中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询MT28GU01GAAA1EGC-0SIT规格参数、现货库存、封装信息等信息!

镁光 (Micron)

镁光 (Micron)

美光制造的创新内存和存储解决方案有助于推动当今最重大、最具破坏性的技术突破,如人工智能、物联网、自动驾驶汽车、个性化医疗甚至太空探索。通过开创更快、更高效的数据收集、存储和管理方式,他们正在帮助变革和改...

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