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IS43TR16640A-15GBLI

  • 描述:存储类型: Volatile 存储格式: DRAM 存储容量: 1Gb (64M x 16) 电源电压: 1.425伏~ 1.575伏 时钟频率: 667 MHz 供应商设备包装: 96-TWBGA(9x13)
  • 品牌: 芯成 (ISSI)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 0
  • 单价: ¥91.21708
  • 数量:
    - +
  • 总计: ¥91.22
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规格参数

  • 制造厂商 芯成 (ISSI)
  • 存储类型 Volatile
  • 存储格式 DRAM
  • 储存接口 并联
  • 安装类别 表面安装
  • 单字、单页写入耗时 15纳秒
  • 访达时期 20纳秒
  • 包装/外壳 96英尺
  • 供应商设备包装 96-TWBGA(9x13)
  • 技术 SDRAM-DDR3
  • 存储容量 1Gb (64M x 16)
  • 时钟频率 667 MHz
  • 电源电压 1.425伏~ 1.575伏
  • 工作温度 -40摄氏度~95摄氏度(TC)
  • 部件状态 Digi-Key停产

IS43TR16640A-15GBLI 产品详情

The IS43TR16640A-15GBLI is a 1Gb DDR3 SDRAM supports 1333MT/s data rate. It has high speed data transfer rates with system frequency up to 933MHz, 8 internal banks for concurrent operation and 8-bit pre-fetch architecture. CK and CK# are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK#. CKE HIGH activates and CKE Low deactivates, internal clock signals and device input buffers and output drivers. All commands are masked when CS# is registered HIGH. CS# provides for external Rank selection on systems with multiple Ranks. CS# is considered part of the command code. On Die Termination: ODT (registered HIGH) enables termination resistance internal to the DDR3 SDRAM. When enabled, ODT is only applied to each DQ, DQSU, DQSU#, DQSL, DQSL#, DMU and DML signal. The ODT pin will be ignored if MR1 and MR2 are programmed to disable RTT.

Feature

  • VDD and VDDQ = 1.5V ±0.075V Standard Voltage
  • VDD and VDDQ = 1.35V + 0.1V, -0.067V Low voltage (L)
  • 5, 6, 7, 8, 9, 10 and 11 Programmable CAS latency
  • 0, CL-1, CL-2 Programmable additive latency
  • Programmable CAS WRITE latency (CWL) based on tCK
  • 4 and 8 programmable burst length
  • Sequential or interleave programmable burst sequence
  • BL switch on the fly
  • Auto Self Refresh (ASR)
  • Self refresh temperature (SRT)
  • Partial array self refresh
  • Asynchronous RESET pin
  • TDQS (termination data strobe) supported (x8 only)
  • OCD (Off-Chip Driver impedance adjustment)
  • Dynamic ODT (On-Die Termination)
  • Driver strength - RZQ/7, RZQ/6 (RZQ = 240R)
  • Write levelling
IS43TR16640A-15GBLI所属分类:存储器,IS43TR16640A-15GBLI 由 芯成 (ISSI) 设计生产,可通过久芯网进行购买。IS43TR16640A-15GBLI价格参考¥91.217083,你可以下载 IS43TR16640A-15GBLI中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询IS43TR16640A-15GBLI规格参数、现货库存、封装信息等信息!

芯成 (ISSI)

芯成 (ISSI)

Integrated Silicon Solution,Inc.(ISSI)是为以下主要市场设计、开发和销售高性能集成电路的技术领导者:(i)汽车,(ii)通信,(iii)数字消费品,以及(iv)工业和...

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