■ SPI bus compatible Serial interface
■ 16-Mbit Page-Erasable Flash memory
■ Page size: 256 bytes
– Page Write in 11 ms (typical)
– Page Program in 0.8 ms (typical)
– Page Erase in 10 ms (typical)
■ SubSector Erase (4 Kbytes)
■ Sector Erase (64 Kbytes)
■ Bulk Erase (16 Mbits)
■ 2.7 V to 3.6 V single supply voltage
■ 50 MHz clock rate (maximum)
■ Deep Power-down mode 1 µA (typical)
■ Electronic Signature
– JEDEC standard two-byte signature (8015h)
■ Software Write Protection on a 64 KByte Sector basis
■ Hardware Write Protection of the memory area selected using the BP0, BP1 and BP2 bits
■ More than 100 000 Write cycles
■ More than 20 year data retention
■ Packages
– ECOPACK® (RoHS compliant)
Description
The M25PE16 is a 16 Mbit (2 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus.
The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase cycle followed by a Page Program cycle.
The memory is organized as 32 sectors that are further divided up into 16 subsectors each (512 subsectors in total). Each sector contains 256 pages and each subsector contains 16 pages. Each page is 256 Bytes wide. Thus, the whole memory can be viewed as consisting of 8192 pages, or 2,097,152 Bytes.
The memory can be erased a page at a time, using the Page Erase instruction, a subsector at a time, using the SubSector Erase instruction, a sector at a time, using the Sector Erase instruction, or as a whole, using the Bulk Erase instruction.
The memory can be Write Protected by either Hardware or Software using mixed volatile and non-volatile protection features, depending on the application needs. The protection granularity is of 64 Kbytes (sector granularity).
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages.
ECOPACK® packages are Lead-free and RoHS compliant.
Feature
- Page program (up to 256 bytes) in 0.64ms (typical)
- Write protection
- Deep power down - 1µA (typical)
- More than 100000 write cycles per sector
- More than 20 years data retention