MB85R4001ANC-GE1

The MB85R4001ANC-GE1 is a 4MB Ferroelectric Random Access Memory (FRAM) chip consisting of 524288 words x 8-bit of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R4001A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R4001A can be used for 10¹⁰ read/write operations, which is a significant improvement over the number of read and write operations supported by flash memory and E²PROM. The MB85R4001A uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.

Feature

Applications