MB85R4M2TFN-G-JAE2

The MB85R4M2T is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS process technologies. The MB85R4M2T is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R4M2T can be used for 1013 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R4M2T uses a pseudo-SRAM interface