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N25Q128A11EF840E

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 128Mb (32M x 4) 电源电压: 1.7伏~2伏 时钟频率: 108兆赫 供应商设备包装: 8-VDFPN (MLP8) (8x6)
  • 品牌: 镁光 (Micron)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 0
  • 单价: ¥27.05947
  • 数量:
    - +
  • 总计: ¥27.06
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规格参数

  • 存储类型 Non-Volatile
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 储存接口 串行外设接口
  • 存储格式 FLASH
  • 访达时期 -
  • 技术 FLASH-NOR
  • 制造厂商 镁光 (Micron)
  • 电源电压 1.7伏~2伏
  • 时钟频率 108兆赫
  • 部件状态 过时的
  • 包装/外壳 8-VDFN Exposed Pad
  • 供应商设备包装 8-VDFPN (MLP8) (8x6)
  • 存储容量 128Mb (32M x 4)
  • 单字、单页写入耗时 8ms, 5ms

N25Q128A11EF840E 产品详情

Features

• SPI-compatible serial bus interface
• 108 MHz (MAX) clock frequency
• 1.7–2.0V single supply voltage
• Dual/quad I/O instruction provides increased throughput up to 432 MHz
• Supported protocols
  – Extended SPI, dual I/O, and quad I/O
• Execute-in-place (XIP) mode for all three protocols
  – Configurable via volatile or nonvolatile registers
  – Enables memory to work in XIP mode directly after power-on
• PROGRAM/ERASE SUSPEND operations
• Continuous read of entire memory via a single command
  – Fast read
  – Quad or dual output fast read
  – Quad or dual I/O fast read

• Flexible to fit application
  – Configurable number of dummy cycles
  – Output buffer configurable
• Software reset
• 64-byte, user-lockable, one-time programmable (OTP) dedicated area
• Erase capability
  – Subsector erase 4KB uniform granularity blocks
  – Sector erase 64KB uniform granularity blocks
  – Full-chip erase

• Write protection
  – Software write protection applicable to every 64KB sector via volatile lock bit
  – Hardware write protection: protected area size defined by five nonvolatile bits (BP0, BP1, BP2, BP3, and TB)
  – Additional smart protections, available upon request
• Electronic signature
  – JEDEC-standard 2-byte signature (BB18h)
  – Unique ID code (UID): 17 read-only bytes, including:
• Two additional extended device ID (EDID) bytes to identify device factory options
• Customized factory data (14 bytes)

• Minimum 100,000 ERASE cycles per sector
• More than 20 years data retention
• Packages JEDEC standard, all RoHS compliant
  – F7 = V-PDFN-8 6mm x 5mm Sawn (MLP8 6mm x 5mm)
  – F8 = V-PDFN-8 8mm x 6mm (MLP8 8mm x 6mm)
  – 12 = T-PBGA-24b05 6mm x 8mm
  – SF = SOP2-16 300 mils body width (SO16W)
  – SE = SOP2-8 208 mils body width (SO8W)


Device Description
The N25Q is the first high-performance multiple input/output serial Flash memory device manufactured on 65nm NOR technology. It features execute-in-place (XIP) functionality, advanced write protection mechanisms, and a high-speed SPI-compatible bus interface. The innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for READ and PROGRAM operations.







(Picture:Pinout / Diagram)

N25Q128A11EF840E所属分类:存储器,N25Q128A11EF840E 由 镁光 (Micron) 设计生产,可通过久芯网进行购买。N25Q128A11EF840E价格参考¥27.059474,你可以下载 N25Q128A11EF840E中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询N25Q128A11EF840E规格参数、现货库存、封装信息等信息!

镁光 (Micron)

镁光 (Micron)

美光制造的创新内存和存储解决方案有助于推动当今最重大、最具破坏性的技术突破,如人工智能、物联网、自动驾驶汽车、个性化医疗甚至太空探索。通过开创更快、更高效的数据收集、存储和管理方式,他们正在帮助变革和改...

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