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N25Q256A13EF840F
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N25Q256A13EF840F

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 256Mb (64M x 4) 电源电压: 2.7伏~3.6伏 时钟频率: 108兆赫 供应商设备包装: 8-VDFPN (MLP8) (8x6)
  • 品牌: 镁光 (Micron)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 0
  • 单价: ¥38.90886
  • 数量:
    - +
  • 总计: ¥38.91
在线询价

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规格参数

  • 存储类型 Non-Volatile
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 储存接口 串行外设接口
  • 存储格式 FLASH
  • 访达时期 -
  • 技术 FLASH-NOR
  • 电源电压 2.7伏~3.6伏
  • 制造厂商 镁光 (Micron)
  • 时钟频率 108兆赫
  • 部件状态 过时的
  • 包装/外壳 8-VDFN Exposed Pad
  • 供应商设备包装 8-VDFPN (MLP8) (8x6)
  • 存储容量 256Mb (64M x 4)
  • 单字、单页写入耗时 8ms, 5ms

N25Q256A13EF840F 产品详情

The N25Q is the first high-performance multiple input/output serial Flash memory device manufactured on 65nm NOR technology. It features execute-in-place (XIP) functionality, advanced write protection mechanisms, and a high-speed SPI-compatible bus interface. The innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for READ and PROGRAM operations.

Features 

• SPI-compatible serial bus interface 

• Double transfer rate (DTR) mode 

• 2.7–3.6V single supply voltage 

• 108 MHz (MAX) clock frequency supported for all protocols in single transfer rate (STR) mode 

• 54 MHz (MAX) clock frequency supported for all protocols in DTR mode 

• Dual/quad I/O instruction provides increased throughput up to 54  MB/s

• Supported protocols
 – Extended SPI, dual I/O, and quad I/O
 – DTR mode supported on all 

• Execute-in-place (XIP) mode for all three protocols
 – Configurable via volatile or nonvolatile registers
 – Enables memory to work in XIP mode directly after power-on 

• PROGRAM/ERASE SUSPEND operations 

• Continuous read of entire memory via a single command
 – Fast read
 – Quad or dual output fast read
 – Quad or dual I/O fast read 

• Flexible to fit application 

 – Configurable number of dummy cycles
 – Output buffer configurable 

• Software reset 

• 3-byte and 4-byte addressability mode supported 

• 64-byte, user-lockable, one-time programmable (OTP) dedicated area 

• An additional reset pin is available on the following devices
  – N25Q256A83ESF40x,N25Q256A83E1240x 

• Erase capability
  – Subsector erase 4KB uniform granularity blocks
  – Sector erase 64KB uniform granularity blocks
  – Full-chip erase 

• Write protection
  – Software write protection applicable to every 64KB sector via volatile lock bit
  – Hardware write protection: protected area size defined by five nonvolatile bits (BP0, BP1, BP2, BP3, and TB)
  – Additional smart protections, available upon request 

• Electronic signature
  – JEDEC-standard 2-byte signature (BA19h)
  – Unique ID of 17 read-only bytes including: additional extended device ID (EDID) to identify device factory options; customized factory data 

• Minimum 100,000 ERASE cycles per sector 

• More than 20 years data retention 

• Packages JEDEC standard, all RoHS compliant
  – V-PDFN-8/8mm x 6mm (also known as SON, DFPN, MLP, MLF)
  – SOP2-16/300mils (also known as SO16W, SO16- Wide, SOIC-16)
  – T-PBGA-24b05/6mm x 8mm (also known as TBGA24)


(Picture: Pinout)


N25Q256A13EF840F所属分类:存储器,N25Q256A13EF840F 由 镁光 (Micron) 设计生产,可通过久芯网进行购买。N25Q256A13EF840F价格参考¥38.908859,你可以下载 N25Q256A13EF840F中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询N25Q256A13EF840F规格参数、现货库存、封装信息等信息!

镁光 (Micron)

镁光 (Micron)

美光制造的创新内存和存储解决方案有助于推动当今最重大、最具破坏性的技术突破,如人工智能、物联网、自动驾驶汽车、个性化医疗甚至太空探索。通过开创更快、更高效的数据收集、存储和管理方式,他们正在帮助变革和改...

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