PC28F00AM29EWHA

Features
• 2Gb = stacked device (two 1Gb die)
• Supply voltage
   – VCC = 2.7–3.6V (program, erase, read)
   – VCCQ = 1.65–VCC (I/O buffers)
• Asynchronous random/page read
   – Page size: 16 words or 32 bytes
   – Page access: 25ns
   – Random access: 100ns (Fortified BGA);110ns (TSOP)
• Buffer program: 512-word program buffer
• Program time
   – 0.88µs per byte (1.14 MB/s) TYP when using full 512-word buffer size in buffer program
• Memory organization
   – Uniform blocks: 128-Kbytes or 64-Kwords each
• Program/erase controller
   – Embedded byte (x8)/word (x16) program algorithms
• Program/erase suspend and resume capability
   – Read from another block during a PROGRAM SUSPEND operation
   – Read or program another block during an ERASE SUSPEND operation
• BLANK CHECK operation to verify an erased block
• Unlock bypass, block erase, chip erase, and write to buffer capability
   – Fast buffered/batch programming
   – Fast block/chip erase
• VPP/WP# pin protection
   – Protects first or last block regardless of block protection settings
• Software protection
   – Volatile protection
   – Nonvolatile protection
   – Password protection
   – Password access
• Extended memory block
   – 128-word (256-byte) block for permanent, secure identification
   – Programmed or locked at the factory or by the customer
• Low power consumption: Standby mode
• JESD47-compliant
   – 100,000 minimum ERASE cycles per block
   – Data retention: 20 years (TYP)
• 65nm multilevel cell (MLC) process technology
• Package
   – 64-ball fortified BGA, 13 x 11mm
• Green packages available
   – RoHS-compliant
   – Halogen-free
• Operating temperature
   – Ambient: –40°C to +85°C

Feature

Applications

(Picture:Pinout / Diagram)