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NAND256W3A2BN6E

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 256Mb (32M x 8) 电源电压: 2.7伏~3.6伏 供应商设备包装: 48-TSOP
  • 品牌: 镁光 (Micron)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 0
  • 单价: ¥42.92432
  • 数量:
    - +
  • 总计: ¥42.92
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规格参数

  • 储存接口 并联
  • 存储类型 Non-Volatile
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 存储格式 FLASH
  • 时钟频率 -
  • 电源电压 2.7伏~3.6伏
  • 包装/外壳 48-TFSOP (0.724", 18.40毫米 Width)
  • 供应商设备包装 48-TSOP
  • 制造厂商 镁光 (Micron)
  • 技术 FLASH-NAND
  • 存储容量 256Mb (32M x 8)
  • 部件状态 过时的
  • 访达时期 50 ns
  • 单字、单页写入耗时 50ns

NAND256W3A2BN6E 产品详情

The NAND256W3A2BN6E is a 256MB non-volatile NAND Flash Memory that uses the single level cell NAND cell technology. It is referred to as the small page family. The device ranges from 128MB to 1GB and operate with either a 1.8/3V voltage supply. The size of a page is either 528 bytes or 264 Words depending on whether the device has a x8 or x16 bus width. The address lines are multiplexed with the data input/output signals on a multiplexed x8 or x16 input/output bus. This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint. The device features an open-drain ready/busy output that can be used to identify if the program/erase/read controller is currently active. The use of an open-drain output allows the ready/ busy pins from several memories to be connected to a single pull-up resistor. A copy back command is available to optimize the management of defective blocks.

Feature

  • High density
  • Multiplexed address/data
  • Pinout compatibility for all densities
  • Copy back program mode - Fast page copy without external buffering
  • Fast block erase - Block erase time - 2ms typical
  • Status register
  • Electronic signature
  • Chip enable DON'T CARE - Simple interface with microcontroller
  • Hardware data protection - Program/erase locked during power transitions
  • Data integrity - 100000 program/erase cycles
  • 10 Years data retention
NAND256W3A2BN6E所属分类:存储器,NAND256W3A2BN6E 由 镁光 (Micron) 设计生产,可通过久芯网进行购买。NAND256W3A2BN6E价格参考¥42.924323,你可以下载 NAND256W3A2BN6E中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询NAND256W3A2BN6E规格参数、现货库存、封装信息等信息!

镁光 (Micron)

镁光 (Micron)

美光制造的创新内存和存储解决方案有助于推动当今最重大、最具破坏性的技术突破,如人工智能、物联网、自动驾驶汽车、个性化医疗甚至太空探索。通过开创更快、更高效的数据收集、存储和管理方式,他们正在帮助变革和改...

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