NAND128W3A2BN6E

The NAND128W3A2BN6E is a non-volatile NAND Flash Memory that uses the single level cell (SLC) NAND cell technology, referred to as the SLC small page family. The devices are either 128/256Mb and operate with a 3V voltage supply. The size of a page is either 528 bytes or 264 words depending on whether the device has a x8 or x16 bus width. The address lines are multiplexed with the data input/output signals on a multiplexed x8 or x16 input/output bus. This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint. Each block can be programmed and erased up to 100000 cycles. To extend the lifetime of NAND flash devices it is strongly recommended to implement an error correction code. A write protect pin to provide hardware protection against program and erase operations. This device features an open-drain ready/busy output that identifies if the program/erase/read controller is currently active.

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