■ SUPPLY VOLTAGE
– VCC = 2.7V to 3.6V for Program, Erase and Read
■ ACCESS TIME: 45, 55, 70ns
■ PROGRAMMING TIME
– 10µs per Byte/Word typical
■ 11 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 8 Main Blocks
■ PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithms
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■ TEMPORARY BLOCK UNPROTECTION MODE
■ LOW POWER CONSUMPTION
– Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W400DT: 00EEh
– Bottom Device Code M29W400D: 00EFh
■ PACKAGES
– Compliant with Lead-Free Soldering Processes
– Lead-Free Versions
(Picture: Pinout)
