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The TC58BYG1S3HBAI4 is Flash Memory 1.8V 2Gbit NAND EEPROM, that includes Tray Packaging, they are designed to operate with a SMD/SMT Mounting Style, it has an Operating Temperature Range range of - 40 C to + 85 C, that offers Memory Size features such as 2 Gbit, Memory Type is designed to work in NAND, as well as the 25 ns Speed, the device can also be used as Block Erase Architecture. In addition, the Interface Type is Parallel, the device is offered in 256 M x 8 Organization, the device has a 30 mA of Supply Current Max, and Data Bus Width is 8 bit, and the Supply Voltage Max is 1.95 V, and Supply Voltage Min is 1.7 V, and the Package Case is TFBGA-63, and Timing Type is Synchronous.
The TC58BYG0S3HBAI6 is EEPROM SLC 1GB NAND 24NM 67VFBGA, that includes 1.7 V ~ 1.95 V Voltage Supply, they are designed to operate with a 67-VFBGA (6.5x8) Supplier Device Package, Speed is shown on datasheet note for use in a 25ns, that offers Series features such as Benand?, Packaging is designed to work in Tray, as well as the 67-VFBGA Package Case, it has an Operating Temperature range of -40°C ~ 85°C (TA). In addition, the Memory Type is EEPROM - NAND, the device is offered in 1G (128M x 8) Memory Size, the device has a Parallel of Interface, and Format Memory is EEPROMs - Serial.
TC58BYG0S3HBAI4 with circuit diagram manufactured by Toshiba. The TC58BYG0S3HBAI4 is available in BGA Package, is part of the Memory, , and with support for Flash Memory 1.8V 1Gbit NAND EEPROM, SLC NAND Flash Parallel 1.8V 1G-bit.
