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S25FL064P0XBHI030

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 64Mb (8M x 8) 电源电压: 2.7伏~3.6伏 时钟频率: 104兆赫 供应商设备包装: 24-BGA (6x8)
  • 品牌: 英飞凌 (Infineon)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

数量 单价 合计
1+ 8.69148 8.69148
10+ 7.53261 75.32616
  • 库存: 11
  • 单价: ¥8.69148
  • 数量:
    - +
  • 总计: ¥8.69
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规格参数

  • 存储类型 Non-Volatile
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 存储格式 FLASH
  • 访达时期 -
  • 技术 FLASH-NOR
  • 储存接口 SPI - Quad I/O
  • 电源电压 2.7伏~3.6伏
  • 时钟频率 104兆赫
  • 制造厂商 英飞凌 (Infineon)
  • 存储容量 64Mb (8M x 8)
  • 包装/外壳 24-TBGA
  • 供应商设备包装 24-BGA (6x8)
  • 部件状态 过时的
  • 单字、单页写入耗时 5s, 3ms

S25FL064P0XBHI030 产品详情

The S25FL064P is a 3.0 Volt (2.7V to 3.6V), single-power-supply flash memory device. The device consists of 128 uniform 64 kB sectors with the two (Top or Bottom) 64 kB sectors further split up into thirty-two 4 kB sub sectors. The S25FL064P device is fully

backward compatible with the S25FL064A device.

The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be programmed in-system with the standard system 3.0-volt VCC supply.

The S25FL064P device adds the following high-performance features using 5 new instructions:

Dual Output Read using both SI and SO pins as output pins at a clock rate of up to 80 MHz

Quad Output Read using SI, SO, W#/ACC and HOLD# pins as output pins at a clock rate of up to 80 MHz

Dual I/O High Performance Read using both SI and SO pins as input and output pins at a clock rate of up to 80 MHz

Quad I/O High Performance Read using SI, SO, W#/ACC and HOLD# pins as input and output pins at a clock rate of up to 80 MHz

Quad Page Programming using SI, SO, W#/ACC and HOLD# pins as input pins to program data at a clock rate of up to 80 MHz

The memory can be programmed 1 to 256 bytes at a time, using the Page Program command. The device supports Sector Erase and Bulk Erase commands.

Each device requires only a 3.0-volt power supply (2.7V to 3.6V) for both read and write functions. Internally generated and regulated voltages are provided for the program operations. This device requires a high voltage supply to the W#/ACC pin to enable the Accelerated Programming mode.

The S25FL064P device also offers a One-Time Programmable area (OTP) of up to 128-bits (16 bytes) for permanent secure identification and an additional 490 bytes of OTP space for other use. This OTP area can be programmed or read using the OTPP or

OTPR instructions. 


Feature

Architectural Advantages

Single power supply operation

– Full voltage range: 2.7 to 3.6V read and write operations

Memory architecture

– Uniform 64-kB sectors

– Top or bottom parameter block (Two 64-kB sectors (top or bottom) broken down into sixteen 4-kB sub-sectors each)

– 256-byte page size

– Backward compatible with the S25FL064A device

Program

– Page Program (up to 256 bytes) in 1.5 ms (typical)

– Program operations are on a page by page basis

– Accelerated programming mode via 9V W#/ACC pin

– Quad Page Programming



S25FL064P0XBHI030所属分类:存储器,S25FL064P0XBHI030 由 英飞凌 (Infineon) 设计生产,可通过久芯网进行购买。S25FL064P0XBHI030价格参考¥8.691480,你可以下载 S25FL064P0XBHI030中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询S25FL064P0XBHI030规格参数、现货库存、封装信息等信息!
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