Features:
·20MHz max. Clock Speed
· Byte and Page-level Write Operations:
-256 byte page
-6 ms max. write cycle time
-No page or sector erase required
· Low-Power CMOS Technology:
-Max. Write current:5 mA at 5.5V,20 MHz
-Read current:7 mA at 5.5V,20 MHz
-Standby current:1uA at 2.5V
(Deep power-down)
· Electronic Signature for Device ID· Self-Timed Erase and Write Cycles:
-Page Erase(6ms max.)
-Sector Erase(10 ms max.)
-Chip Erase(10 ms max.)
· Sector Write Protection (32K byte/sector):
-Protect none,1/4,1/2 or all of array
· Built-In Write Protection:
-Power-on/off data protection circuitry
-Write enable latch
-Write-protect pin· High Reliability:
-Endurance:1M erase/write cycles
-Data Retention:>200 years
-ESD Protection:4000V
· Temperature Ranges Supported:
-Industrial(1):-40℃ to +85℃· Pb-Free and RoHS Compliant
Description:
The Microchip Technology Inc.25AA1024T-I/MF is a 1024 Kbit serial EEPROM memory with byte-level and page-level serial EEPROM functions. It also features Page, Sector and Chip erase functions typically associated with Flash-based products. These functions are not required for byte or page write operations. The memory is accessed via a simple Serial Peripheral Interface
(SPI) compatible serial bus. The bus signals requiredare a clock input(SCK) plus separate data in (SI) and data out(SO) lines. Access to the device is controlled by a Chip Select(CS) input.
Communication to the device can be paused via thehold pin(HOLD). While the device is paused, transi-tions on its inputs will be ignored, with the exception of Chip Select, allowing the host to service higher priority interrupts.
The 25AA1024T-I/MF is available in standard packages including 8-lead PDIP and SOlJ, and advanced 8-lead DFN package. All devices are Pb-free.
Feature
- 128K x 8-bit (1 Mbit)
- Serial Peripheral Interface (SPI) Compatible
- Supports SPI modes 0 and 3
- Up to 20 MHz clock frequency
- Self-Timed Erase and Write Cycles (6 ms max.)
- Low Power Consumption
- Read current: 10 mA (Max) at 20 MHz
- Write current: 7mA (Max) at 5.5V
- Deep power-down current: 1 μA (Max) at 2.5 V
- Block Write Protection: Protect 1/4, 1/2 or Entire Array
- More than 1 million erase/write cycles
- Data retention > 200 years
- Temperature Ranges Available
- Industrial (I): -40°C to 85°C
- Automotive AECQ-100 Qualified1
- Factory Programming Available
- Available in standard packages including 8-lead PDIP and SOIJ, and advanced package 8-lead 5x6 DFN
(Picture:Pinout / Diagram)
