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SST26WF016B-104I/MF

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 16Mb (2M x 8) 电源电压: 1.65伏~1.95伏 时钟频率: 104兆赫 供应商设备包装: 8-WDFN (5x6)
  • 品牌: 美国微芯 (MICROCHIP)
  • 交期:2-3 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

数量 单价 合计
1+ 9.21000 9.21000
200+ 3.56887 713.77560
500+ 3.44328 1721.64350
1000+ 3.38049 3380.49100
  • 库存: 96
  • 单价: ¥9.21001
  • 数量:
    - +
  • 总计: ¥9.21
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规格参数

  • 制造厂商 美国微芯 (MICROCHIP)
  • 部件状态 可供货
  • 存储类型 Non-Volatile
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 存储格式 FLASH
  • 技术 闪光
  • 访达时期 -
  • 电源电压 1.65伏~1.95伏
  • 储存接口 SPI - Quad I/O
  • 包装/外壳 8-WDFN Exposed Pad
  • 时钟频率 104兆赫
  • 存储容量 16Mb (2M x 8)
  • 单字、单页写入耗时 1.5毫秒
  • 供应商设备包装 8-WDFN (5x6)

SST26WF016B-104I/MF 产品详情

SST26WF040B/080B/016B Serial Quad I/O (SQI) SuperFlash® Flash Memory

From Microchip the SST26WFxxxB family of products are Serial Quad I/O (SQI) Flash Memory devices available in 4-, 8- and 16-bit variants. These devices support full command-set compatibility with Serial Peripheral Interface (SPI) protocol and enable minimum latency Execute-in-Place (XIP) capability without the need for code shadowing on an SRAM. The SST26WFxxxB devices exhibit low power consumption, making them suitable for portable battery powered applications.

Features

Operating Voltage Range 1.6 to 1.95 V
Clock Frequency 104 MHz max
Serial Interface Architecture
Low Power Consumption: Active Read Current: 15 mA (typical at 104 MHz), Standby Current: 10 μA (typical)
Burst Modes: Continuous Linear Burst, 8/16/32/64 Byte Linear Burst with Wrap-Around
Page-Program: 256 Bytes per page in x1 or x4 mode
Fast Erase Time: Sector/Block Erase 18 ms (typ), 25 ms (max); Chip Erase 35 ms (typ), 50 ms (max)
Flexible Erase Capability
End-of-Write Detection
Write-Suspend
Software Protection
Software Reset (RST) Mode
SFDP (Serial Flash Discoverable Parameters)

Feature

  • Serial Interface Architecture: Nibble-wide multiplexed I/O’s with SPI-like serial command structure
  • Mode 0 and Mode 3
  • x1/x2/x4 Serial Peripheral Interface (SPI) Protocol -Burst Modes
  • Continuous linear burst, 8/16/32/64 Byte linear burst with wrap-around
  • Page-Program: 256 Bytes per page in x1 or x4 mode
  • Flexible Erase Capability: Uniform 4 KByte sectors, Four 8 KByte top and bottom parameter overlay blocks, One 32 KByte top and bottom overlay block, Uniform 64 KByte overlay blocks
  • Software Write Protection: Individual Block-Locking: 64 KByte blocks, two 32 KByte blocks, and eight 8 KByte parameter blocks
  • Low Power Consumption: Active Read current: 15 mA (typical at 104 MHz), Standby Current: 10 µA (typical)
  • SFDP (Serial Flash Discoverable Parameters)
  • Packages Available: 8-contact WSON (6mm x 5mm), 8-lead SOIC (150 mil), 8-ball XFBGA (Z-Scale)
  • All devices are RoHS compliant
SST26WF016B-104I/MF所属分类:存储器,SST26WF016B-104I/MF 由 美国微芯 (MICROCHIP) 设计生产,可通过久芯网进行购买。SST26WF016B-104I/MF价格参考¥9.210008,你可以下载 SST26WF016B-104I/MF中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询SST26WF016B-104I/MF规格参数、现货库存、封装信息等信息!
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