VB1601500000G

MACOM's MAGX-000035-0150x GaN HEMT Pulsed Power Transistors are gold metalized Gallium Nitride (GaN) on Silicon Carbide RF Power transistors suitable for a variety of RF power amplifier applications. These devices use a state-of-the-art wafer fabrication process to offer high gain, efficiency, bandwidth, ruggedness over multiple octave bandwidths for demanding application needs. Designed using a thermally enhanced flanged (Cu/W) or flangeless (Cu) ceramic package, MAGX-000035-0150x provides excellent thermal performance. High breakdown voltages enable reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. These GaN on SIC depletion mode transistors feature common source configuration, broadband class AB operation, +50V typical operation, 15W of output power, and MTTF of 600 years. Typical applications can include commercial wireless infrastructure (WCDMA, LTE, WiMAX), air traffic control radar, weather radar, military radar, public radio, industrial, scientific & medical, SATCOM, and instrumentation.