| S908QC8E0CDTE | | 8-BIT EEPROM EMULATION Q MCUS | ¥52.57179 |
| S908GR8E0CDWE | | MICROCONTROLLER, CMOS | ¥52.57179 |
| S908AB32AH3CFUE | | AUTO 32K FLASH & 512 EE | ¥118.36279 |
| S908QY1E0CDTER | | S908Q - 8-BIT MCU, HC08 CORE, 1. | ¥11.26538 |
| S908QB4E0CDTE | | MICROCONTROLLER, 8-BIT, HC08/S08 | ¥19.90232 |
| S908GZ60H0CFJE | | 8-BIT MCU, HC08 CORE, 60KB FLASH | ¥45.06154 |
| S9013 | 伯恩半导体 (BORN) | 晶体管类型:NPN 集射极击穿电压(Vceo):25V 集电极电流(Ic):500mA 功率(Pd):300mW 200-350 | ¥0.08449 |
| S9013 J3 | 创基 (CBI) | 晶体管类型:NPN 集射极击穿电压(Vceo):25V 集电极电流(Ic):500mA 功率(Pd):300mW 直流电流增益(hFE@Ic,Vce):200@50mA,1V (200-350) | ¥0.09654 |
| S9012 2T1 | 创基 (CBI) | 晶体管类型:PNP 集射极击穿电压(Vceo):25V 集电极电流(Ic):500mA 功率(Pd):300mW 直流电流增益(hFE@Ic,Vce):200@50mA,1V (200-350) | ¥0.10645 |
| S9015 | 固得沃克 (GOODWORK) | 晶体管类型:PNP 集射极击穿电压(Vceo):45V 集电极电流(Ic):100mA 功率(Pd):200mW 直流电流增益(hFE@Ic,Vce):300@1mA,5V (300-400) | ¥0.04622 |