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CY62167EV30LL-45BVXI

  • 描述:存储类型: Volatile 存储格式: SRAM 存储容量: 16Mb (2M x 8, 1M x 16) 电源电压: 2.2伏~3.6伏 供应商设备包装: 48-VFBGA (6x8)
  • 品牌: 英飞凌 (Infineon)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 0
  • 单价: ¥105.09448
  • 数量:
    - +
  • 总计: ¥105.09
在线询价

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规格参数

  • 部件状态 可供货
  • 存储类型 Volatile
  • 制造厂商 英飞凌 (Infineon)
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 存储接口 并联
  • 存储格式 SRAM
  • 时钟频率 -
  • 技术 SRAM-异步
  • 电源电压 2.2伏~3.6伏
  • 单字、单页写入耗时 45ns
  • 访达时期 45纳秒
  • 存储容量 16Mb (2M x 8, 1M x 16)
  • 包装/外壳 48-VFBGA
  • 供应商设备包装 48-VFBGA (6x8)

CY62167EV30LL-45BVXI 产品详情

The CY62167EV30LL-45BVXI is a 16Mb high performance CMOS static RAM organized as 1M words by 16-bits or 2M words by 8-bits. This device features an advanced circuit design that provides an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption by 99% when addresses are not toggling. Place the device into standby mode when deselected. The input and output pins are placed in a high impedance state when the device is deselected, outputs are disabled, both byte high enable and byte low enable are disabled or a write operation is in progress. To write to the device, take chip enables and write enable input LOW. If byte low enable is LOW, then data from I/O pins is written into the location specified on the address pins.

Feature

  • Ultra-low standby power
  • Ultra-low active power
  • Easy memory expansion with CE1, CE2 and OE
  • Automatic power-down when deselected
  • CMOS for optimum speed/power


CY62167EV30LL-45BVXI所属分类:存储器,CY62167EV30LL-45BVXI 由 英飞凌 (Infineon) 设计生产,可通过久芯网进行购买。CY62167EV30LL-45BVXI价格参考¥105.094479,你可以下载 CY62167EV30LL-45BVXI中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询CY62167EV30LL-45BVXI规格参数、现货库存、封装信息等信息!
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