9icnet provides you with PSMN4R3-80ES,127 designed and produced by NXP USA Inc., which is sold in 9icnet on the spot, and can be purchased through channels such as the original factory and agents. PSMN4R3-80ES,127 price reference $1.10000. NXP USA Inc. PSMN4R3-80ES,127 Package/Specification: MOSFET N-CH 80V 120A I2PAK. You can download PSMN4R3-80ES,127 english data, pin diagram, Datasheet data sheet function manual, the data contains detailed pin diagrams of diode rectifiers, application circuit diagrams of functions, voltages, usage methods and tutorials.
Prices and stocks marked on 9icnet are for reference only. If you don't find what you are looking for, you can contact us by email or online message, such as PSMN4R3-80ES,127 price, stock quantity, data sheet and manufacturer. We look forward to your contact and provide you with quality service.
The PSMN4R2-60PLQ is MOSFET N-Channel MOSFET, that includes Tube Packaging, they are designed to operate with a 0.211644 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-220-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as 1 N-Channel Transistor Type. In addition, the Pd Power Dissipation is 263 W, the device is offered in 72 ns Fall Time, the device has a 97 ns of Rise Time, and Id Continuous Drain Current is 130 A, and the Vds Drain Source Breakdown Voltage is 60 V, and Vgs th Gate Source Threshold Voltage is 2.45 V, and the Rds On Drain Source Resistance is 8.6 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 84 ns, and Typical Turn On Delay Time is 47 ns, and the Qg Gate Charge is 151 nC.
The PSMN4R3-100PS,127 is MOSFET N-CH 100V 120A TO220AB, that includes 4V @ 1mA Vgs th Max Id, they are designed to operate with a TO-220AB Supplier Device Package, Rds On Max Id Vgs is shown on datasheet note for use in a 4.3 mOhm @ 25A, 10V, that offers Power Max features such as 338W, Packaging is designed to work in Tube, as well as the TO-220-3 Package Case, it has an Operating Temperature range of -55°C ~ 175°C (TJ). In addition, the Mounting Type is Through Hole, the device is offered in 9900pF @ 50V Input Capacitance Ciss Vds, the device has a 170nC @ 10V of Gate Charge Qg Vgs, and FET Type is MOSFET N-Channel, Metal Oxide, and the FET Feature is Standard, and Drain to Source Voltage Vdss is 100V, and the Current Continuous Drain Id 25°C is 120A (Tc).
PSMN4R3-30BL with circuit diagram manufactured by NXP. is part of the FETs - Single.
The PSMN4R3-30PL is MOSFET N-CH 30V 100A TO220AB manufactured by NXP. The PSMN4R3-30PL is available in TO-220-3 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 30V 100A TO220AB.
