9icnet provides you with PSMN5R0-100ES,127 designed and produced by NXP USA Inc., which is sold in 9icnet on the spot, and can be purchased through channels such as the original factory and agents. PSMN5R0-100ES,127 price reference $1.29000. NXP USA Inc. PSMN5R0-100ES,127 Package/Specification: MOSFET N-CH 100V 120A I2PAK. You can download PSMN5R0-100ES,127 english data, pin diagram, Datasheet data sheet function manual, the data contains detailed pin diagrams of diode rectifiers, application circuit diagrams of functions, voltages, usage methods and tutorials.
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The PSMN4R8-100BSEJ is MOSFET N-CH 100V D2PAK, that includes Digi-ReelR Alternate Packaging Packaging, they are designed to operate with a 0.139332 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Technology is designed to work in Si, it has an Operating Temperature range of -55°C ~ 175°C (TJ), the device can also be used as Surface Mount Mounting Type. In addition, the Number of Channels is 1 Channel, the device is offered in D2PAK Supplier Device Package, the device has a Single of Configuration, and FET Type is MOSFET N-Channel, Metal Oxide, and the Power Max is 405W, and Transistor Type is 1 N-Channel, and the Drain to Source Voltage Vdss is 100V, and Input Capacitance Ciss Vds is 14400pF @ 50V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 120A (Tj), and the Rds On Max Id Vgs is 4.8 mOhm @ 25A, 10V, and Vgs th Max Id is 4V @ 1mA, and the Gate Charge Qg Vgs is 278nC @ 10V, and Pd Power Dissipation is 406 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 69 ns, and Rise Time is 65 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 120 A, and the Vds Drain Source Breakdown Voltage is 100 V, and Vgs th Gate Source Threshold Voltage is 3 V, and the Rds On Drain Source Resistance is 4.1 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 127 ns, and Typical Turn On Delay Time is 41 ns, and the Qg Gate Charge is 196 nC, and Channel Mode is Enhancement.
PSMN4R8-100PSEQ with user guide, that includes 1 N-Channel Transistor Type, they are designed to operate with a N-Channel Transistor Polarity, Technology is shown on datasheet note for use in a Si, that offers Packaging features such as Tube, Number of Channels is designed to work in 1 Channel.
PSMN5R0-100BS with circuit diagram manufactured by VB. The PSMN5R0-100BS is available in (DPAK) Package, is part of the IC Chips.
The PSMN5R0-100ES is MOSFET N-CH 100V 120A I2PAK manufactured by PHILIPS. The PSMN5R0-100ES is available in TO-262-3 Long Leads, I²Pak, TO-262AA Package, is part of the FETs - Single, , and with support for MOSFET N-CH 100V 120A I2PAK.
