9icnet provides you with BPW83 designed and produced by Vishay Semiconductor Opto Division, which is sold in 9icnet on the spot, and can be purchased through channels such as the original factory and agents. BPW83 price reference $0.94000. Vishay Semiconductor Opto Division BPW83 Package/Specification: PHOTODIODE 350 TO 1120 NM. You can download BPW83 english data, pin diagram, Datasheet data sheet function manual, the data contains detailed pin diagrams of diode rectifiers, application circuit diagrams of functions, voltages, usage methods and tutorials.
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The BPW77NA is PHOTOTRANSISTOR NPN TO-18, that includes Phototransistors Product, they are designed to operate with a Chip Type, Packaging is shown on datasheet note for use in a Bulk, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-206AA, TO-18-3 Metal Can, it has an Operating Temperature range of -40°C ~ 125°C (TA), the device can also be used as Through Hole Mounting Type. In addition, the Power Max is 250mW, the device is offered in 50mA Current Collector Ic Max, the device has a 70V of Voltage Collector Emitter Breakdown Max, and Orientation is Top View, and the Wavelength is 850nm, and Current Dark Id Max is 100nA, and the Viewing Angle is 20°, and Pd Power Dissipation is 250 mW, it has an Maximum Operating Temperature range of + 125 C, it has an Minimum Operating Temperature range of - 40 C, and the Collector Emitter Voltage VCEO Max is 70 V, and Collector Emitter Saturation Voltage is 0.15 V, and the Dark Current is 100 nA, and Maximum On State Collector Current is 50 mA, and the Collector Emitter Breakdown Voltage is 70 V, and Light Current is 15 mA.
The BPW77NB is PHOTOTRANSISTOR NPN TO-18, that includes 850nm Wavelength, they are designed to operate with a 70V Voltage Collector Emitter Breakdown Max, Viewing Angle is shown on datasheet note for use in a 20°, that offers Type features such as Chip, Product is designed to work in Phototransistors, as well as the 250mW Power Max, the device can also be used as 250 mW Pd Power Dissipation. In addition, the Packaging is Bulk, the device is offered in TO-206AA, TO-18-3 Metal Can Package Case, the device has a Top View of Orientation, it has an Operating Temperature range of -40°C ~ 125°C (TA), and the Mounting Style is Through Hole, and Mounting Type is Through Hole, it has an Minimum Operating Temperature range of - 40 C, it has an Maximum Operating Temperature range of + 125 C, and the Maximum On State Collector Current is 50 mA, and Light Current is 10 mA, and the Dark Current is 100 nA, and Current Dark Id Max is 100nA, and the Current Collector Ic Max is 50mA, and Collector Emitter Voltage VCEO Max is 70 V, and the Collector Emitter Saturation Voltage is 0.15 V, and Collector Emitter Breakdown Voltage is 70 V.
The BPW82 is PHOTODIODE PIN SV 950NM, that includes 2 nA Dark Current, they are designed to operate with a 100 ns Fall Time, Half Intensity Angle Degrees is shown on datasheet note for use in a 65 deg, it has an Maximum Operating Temperature range of + 100 C, it has an Minimum Operating Temperature range of - 40 C, as well as the Through Hole Mounting Style, the device can also be used as 4E-14 W/sqrt Hz Noise Equivalent Power NEP. In addition, the Packaging is Bulk, the device is offered in 215 mW Pd Power Dissipation, the device has a 950 nm of Peak Wavelength, and Photocurrent is 45 uA, and the Product is PIN Photodiodes, and Rise Time is 100 ns, and the Vr Reverse Voltage is 60 V.
