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SST25VF080B-80-4I-S2AE

  • 描述:存储类型: Non-Volatile 存储格式: FLASH 存储容量: 8Mb (1M x 8) 电源电压: 2.7伏~3.6伏 时钟频率: 80 MHz 供应商设备包装: 8-SOIC
  • 品牌: 微芯 (Microchip)
  • 交期:5-7 工作日
渠道:
  • 自营
  • 得捷
  • 贸泽

起订量: 1

  • 库存: 0
  • 单价: ¥35.64955
  • 数量:
    - +
  • 总计: ¥35.65
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规格参数

  • 制造厂商 微芯 (Microchip)
  • 存储类型 Non-Volatile
  • 工作温度 -40摄氏度~85摄氏度(TA)
  • 安装类别 表面安装
  • 储存接口 串行外设接口
  • 存储格式 FLASH
  • 技术 闪光
  • 访达时期 -
  • 供应商设备包装 8-SOIC
  • 电源电压 2.7伏~3.6伏
  • 存储容量 8Mb (1M x 8)
  • 包装/外壳 8-SOIC (0.209", 5.30毫米 Width)
  • 时钟频率 80 MHz
  • 单字、单页写入耗时 10s
  • 部件状态 过时的

SST25VF080B-80-4I-S2AE 产品详情

Description

SST’s 25 series Serial Flash family features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total system costs. The SST25VF080B-80-4I-S2AE devices are enhanced with improved operating frequency and lower power consumption. SST25VF080B-80-4I-S2AE SPI serial flash memories are manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. 

The SST25VF080B-80-4I-S2AE devices significantly improve performance and reliability, while lowering power consumption. The devices write (Program or Erase) with a single power supply of 2.7-3.6V for SST25VF080B. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. 

The SST25VF080B-80-4I-S2AE device is offered in 8-lead SOIC (200 mils), 8-lead SOIC (150 mils), 8-contact WSON (6mm x 5mm), and 8-lead PDIP (300 mils) packages. See Figure 2 for pin assignments.


Features
• Single Voltage Read and Write Operations
  – 2.7-3.6V
• Serial Interface Architecture
  – SPI Compatible: Mode 0 and Mode 3
• High Speed Clock Frequency
  – 50/66 MHz conditional (SST25VF080B-50-xx-xxxx)
  – 80 MHz (SST25VF080B-80-xx-xxxx)
• Superior Reliability
  – Endurance: 100,000 Cycles (typical)
  – Greater than 100 years Data Retention
• Low Power Consumption:
  – Active Read Current: 10 mA (typical)
  – Standby Current: 5 µA (typical)
• Flexible Erase Capability
  – Uniform 4 KByte sectors
  – Uniform 32 KByte overlay blocks
  – Uniform 64 KByte overlay blocks
• Fast Erase and Byte-Program:
  – Chip-Erase Time: 35 ms (typical)
  – Sector-/Block-Erase Time: 18 ms (typical)
  – Byte-Program Time: 7 µs (typical)
• Auto Address Increment (AAI) Programming
  – Decrease total chip programming time over Byte-Program operations
• End-of-Write Detection
  – Software polling the BUSY bit in Status Register
  – Busy Status readout on SO pin in AAI Mode
• Hold Pin (HOLD#)
  – Suspends a serial sequence to the memory without deselecting the device
• Write Protection (WP#)
  – Enables/Disables the Lock-Down function of the status register
• Software Write Protection
  – Write protection through Block-Protection bits in status register
• Temperature Range
  – Commercial: 0°C to +70°C
  – Industrial: -40°C to +85°C
• Packages Available
  – 8-lead SOIC (200 mils)
  – 8-lead SOIC (150 mils)
  – 8-contact WSON (6mm x 5mm)
  – 8-lead PDIP (300 mils)
• All devices are RoHS compliant

Feature

  • Single Voltage Read and Write Operations– 2.7-3.6V
  • Serial Interface Architecture
    • Supports 50 MHz SPI clock (80 MHz no longer available see EOL NOTIFICATION)
  • Superior Reliability
    • Endurance: 100,000 Cycles (typical)
    • Greater than 100 years Data Retention
  • Low Power Consumption:
    • Program & Erase Current: 30mA (max)
    • Active Read Current: 10 mA (typical)
    • Standby Current: 5 µA (typical)
  • Flexible Erase Capability
    • Uniform 4 KByte sectors
    • Uniform 32 KByte & 64 KByte overlay blocks
  • Fast Erase and Byte-Program:
    • Chip-Erase Time: 35 ms (typical)
    • Sector-/Block-Erase Time: 18 ms (typical)
    • Byte-Program Time: 7 µs (typical)
  • Auto Address Increment (AAI) Programming
    • Decrease total chip programming time over Byte-Program operations
  • End-of-Write Detection
    • Software polling the BUSY bit in Status Register
    • Busy Status readout on SO pin in AAI Mode
  • Hold Pin (HOLD#)
    • Suspends a serial sequence to the memory without deselecting the device
  • Write Protection (WP#)
    • Enables/Disables the Lock-Down function of the status register
  • Software Write Protection
    • Write protection through Block-Protection bits in the status register
  • Temperature Range
    • Commercial: 0°C to +70°C
    • Industrial: -40°C to +85°C
  • Packages Available– 8-lead SOIC (200 mils)– 8-contact WSON (6mm x 5mm)– 8-lead PDIP (300 mils)– 8-bump CSP
  • All devices are RoHS compliant


(Picture: Pinout)


SST25VF080B-80-4I-S2AE所属分类:存储器,SST25VF080B-80-4I-S2AE 由 微芯 (Microchip) 设计生产,可通过久芯网进行购买。SST25VF080B-80-4I-S2AE价格参考¥35.649554,你可以下载 SST25VF080B-80-4I-S2AE中文资料、PDF数据手册、Datasheet数据手册功能说明书,可查询SST25VF080B-80-4I-S2AE规格参数、现货库存、封装信息等信息!

微芯 (Microchip)

微芯 (Microchip)

Microchip Technology Inc.是微控制器和模拟半导体的领先供应商,为全球数千种不同的客户应用程序提供低风险的产品开发、更低的系统总成本和更快的上市时间。Microchip总部位于亚利...

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